Silicon proven with over 325 million devices shipped in leading game consoles, handsets, networking, and consumer devices – Ideal technology for embedded memory.

Differentiated, patented memory technology with an unparalleled combination of performance, density, low power and cost. 1T-SRAM combines the high capacity of embedded DRAM (eDRAM) with the performance, low power and ease of manufacture of traditional (6T) SRAM. 1T-SRAM has been used successfully in over 175 million devices powering dozens of market-leading electronic products.

MoSys's patented 1T-SRAM memory technology is based on a dynamic bit cell, which uses a single transistor and capacitor achieving a considerable size advantage over six-transistor SRAMs (6T-SRAMs) and other conventional SRAM technologies. MoSys surrounds the bit cells with an array of architectural and circuit innovations to create a complete cost-effective and easy-to-integrate embedded memory solution. With a simplified SRAM like single cycle interface, the 1T-SRAM is a superior alternative to 6T-SRAMs in embedded SoC designs. 1T-SRAM provides a synchronous, self timed access with a transparent refresh unburdening the user from refresh operations to retain data.

• High Density - up to 3X smaller silicon area than 6T SRAM
• Low Power Consumption - Up to 50% lower than 6T SRAM
• Ease of Manufacture - Standard logic process, efficient integration in SoC
• Ease of Use - Simple standard SRAM interface
• High Speed - SRAM performance, Low latency random access
• High Reliability - Dramatically reduced SER ( < .1FIT/Mbit in .65nm)
• High Quality - MoSys patented Transparent ECC Circuitry (TEC^®), no area penalty

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